2SK2543 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2543 Switching Regulator Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) DS DMa

isc N-Channel MOSFET Transistor 2SK2543FEATURESStatic drain-source on-resistance:RDS(on) 0.85Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS

2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2544 Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 600 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain-source ON resistance : R = 0.29 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode : V

2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10

2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2542 Switching Regulator Applications Unit: mm 4 V gate drive Low drain-source ON resistance : R = 0.75 (typ.) DS (ON) High forward transfer admittance : |Y | = 7.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 500 V) DS Enhancement-mode : V = 2.0~4.0 V (V = 10 V, I