2SK2543 - описание и поиск аналогов

2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2543 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Ma

isc N-Channel MOSFET Transistor 2SK2543 FEATURES Static drain-source on-resistance RDS(on) 0.85 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATINGS

2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2544 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M

2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2549 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm 2.5 V gate drive Low drain-source ON resistance R = 0.29 (typ.) DS (ON) High forward transfer admittance Y = 3.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 16 V) DS Enhancement-mode V

2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2545 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Y = 5.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10

2SK2542 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2542 Switching Regulator Applications Unit mm 4 V gate drive Low drain-source ON resistance R = 0.75 (typ.) DS (ON) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 500 V) DS Enhancement-mode V = 2.0 4.0 V (V = 10 V, I