2SK2543 MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

2SK2543 Specs and Replacement

Type Designator: 2SK2543

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220NIS

2SK2543 substitution

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2SK2543 datasheet

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2SK2543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2543 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.75 (typ.) High forward transfer admittance Y = 7.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1 mA) DS D Ma... See More ⇒

..2. Size:259K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK2543 FEATURES Static drain-source on-resistance RDS(on) 0.85 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATINGS... See More ⇒

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2SK2544 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2544 Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.9 (typ.) High forward transfer admittance Yfs = 5.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute M... See More ⇒