BUK581-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUK581-100A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Id|ⓘ - Corriente continua de drenaje: 0.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET BUK581-100A

BUK581-100A Datasheet (PDF)

..1. Size:59K philips
buk581-100a 2.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 0.9 Aapplications. Ptot Total power dissipation 1.5 W

7.1. Size:58K philips
buk581-60a 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 1.5 Aapplications. Ptot Total power dissipation 1.5 W

9.1. Size:55K philips
buk583-60a 1.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 3.2 Aapplications. Ptot Total power dissipation 1.8 W

9.2. Size:61K philips
buk582-60a 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 2.5 Aapplications. Ptot Total power dissipation 1.7 W

9.3. Size:55K philips
buk582-100a 2.pdf

Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 1.7 Aapplications. Ptot Total power dissipation 1.8 W

Otros transistores... BUK552-100A , BUK552-100B , BUK553-100A , BUK555-100A , BUK555-100B , BUK555-200A , BUK563-100A , BUK565-100A , STP80NF70 , BUK582-100A , BUK7506-30 , BUK7508-55 , BUK7510-30 , BUK7514-30 , BUK7514-55 , BUK7518-55 , BUK7524-55 .

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