BUK581-100A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK581-100A datasheet

..1. Size:59K philips
buk581-100a 2.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mount ID Drain current (DC) 0.9 A applications. Ptot Total power dissipation 1.5 W

7.1. Size:58K philips
buk581-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 1.5 A applications. Ptot Total power dissipation 1.5 W

9.1. Size:55K philips
buk583-60a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 3.2 A applications. Ptot Total power dissipation 1.8 W

9.2. Size:61K philips
buk582-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 2.5 A applications. Ptot Total power dissipation 1.7 W