BUK581-100A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 0.9 Aapplications. Ptot Total power dissipation 1.5 W

Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 1.5 Aapplications. Ptot Total power dissipation 1.5 W

Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 3.2 Aapplications. Ptot Total power dissipation 1.8 W

Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 2.5 Aapplications. Ptot Total power dissipation 1.7 W

Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 1.7 Aapplications. Ptot Total power dissipation 1.8 W