BUK581-100A - описание и поиск аналогов

Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mount ID Drain current (DC) 0.9 A applications. Ptot Total power dissipation 1.5 W

Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 1.5 A applications. Ptot Total power dissipation 1.5 W

Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 3.2 A applications. Ptot Total power dissipation 1.8 W

Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 2.5 A applications. Ptot Total power dissipation 1.7 W

Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mount ID Drain current (DC) 1.7 A applications. Ptot Total power dissipation 1.8 W