BUK581-100A MOSFET Datasheet: N-Ch, 100V, 0.9A. Full specification with pinout and replacement list

BUK581-100A Specs and Replacement

Type Designator: BUK581-100A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: SOT223

BUK581-100A substitution

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BUK581-100A datasheet

..1. Size:59K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 100 V suitable for surface mount ID Drain current (DC) 0.9 A applications. Ptot Total power dissipation 1.5 W... See More ⇒

7.1. Size:58K philips
buk581-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 1.5 A applications. Ptot Total power dissipation 1.5 W ... See More ⇒

9.1. Size:55K philips
buk583-60a 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 3.2 A applications. Ptot Total power dissipation 1.8 W ... See More ⇒

9.2. Size:61K philips
buk582-60a 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 60 V suitable for surface mount ID Drain current (DC) 2.5 A applications. Ptot Total power dissipation 1.7 W ... See More ⇒