BUK581-100A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK581-100A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package:
SOT223
BUK581-100A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK581-100A
Datasheet (PDF)
..1. Size:59K philips
buk581-100a 2.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 0.9 Aapplications. Ptot Total power dissipation 1.5 W
7.1. Size:58K philips
buk581-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK581-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 1.5 Aapplications. Ptot Total power dissipation 1.5 W
9.1. Size:55K philips
buk583-60a 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 3.2 Aapplications. Ptot Total power dissipation 1.8 W
9.2. Size:61K philips
buk582-60a 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK582-60A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 60 Vsuitable for surface mount ID Drain current (DC) 2.5 Aapplications. Ptot Total power dissipation 1.7 W
9.3. Size:55K philips
buk582-100a 2.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 100 Vsuitable for surface mount ID Drain current (DC) 1.7 Aapplications. Ptot Total power dissipation 1.8 W
Datasheet: BUK552-100A
, BUK552-100B
, BUK553-100A
, BUK555-100A
, BUK555-100B
, BUK555-200A
, BUK563-100A
, BUK565-100A
, IRFP450
, BUK582-100A
, BUK7506-30
, BUK7508-55
, BUK7510-30
, BUK7514-30
, BUK7514-55
, BUK7518-55
, BUK7524-55
.
