TPC8017-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8017-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 610 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0066 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8017-H MOSFET
TPC8017-H Datasheet (PDF)
tpc8017-h.pdf

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS
tpc8016-h.pdf

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R = 3.7 m
tpc8010-h.pdf

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 18 nC (typ.) g Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High fo
tpc8018-h.pdf

TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit: mmApplications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source ON
Otros transistores... TPC8004 , TPC8006-H , TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H , IRF540 , TPC8018-H , TPC8020-H , TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , TPC8030 .
History: WMM161N15T2 | AP4453M | SHDG225509 | SMG2301 | TK9A20DA | GSM3814W
History: WMM161N15T2 | AP4453M | SHDG225509 | SMG2301 | TK9A20DA | GSM3814W



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