TPC8017-H - Даташиты. Аналоги. Основные параметры
Наименование производителя: TPC8017-H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 610 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0066 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8017-H
TPC8017-H Datasheet (PDF)
tpc8017-h.pdf

TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS
tpc8016-h.pdf

TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R = 3.7 m
tpc8010-h.pdf

TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 18 nC (typ.) g Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High fo
tpc8018-h.pdf

TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit: mmApplications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source ON
Другие MOSFET... TPC8004 , TPC8006-H , TPC8009-H , TPC8010-H , TPC8012-H , TPC8013-H , TPC8014 , TPC8016-H , IRF540N , TPC8018-H , TPC8020-H , TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , TPC8030 .
History: 2SJ540 | ST2305A | 2SK3055 | 2SJ541 | FTK4410D | IPI076N15N5 | AP9620AGM
History: 2SJ540 | ST2305A | 2SK3055 | 2SJ541 | FTK4410D | IPI076N15N5 | AP9620AGM



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