TPC8017-H Specs and Replacement
Type Designator: TPC8017-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 610 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: SOP8
TPC8017-H substitution
- MOSFET ⓘ Cross-Reference Search
TPC8017-H datasheet
tpc8017-h.pdf
TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 25 nC (typ.) Low drain-source ON resistance RDS ... See More ⇒
tpc8016-h.pdf
TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Qg = 48 nc (typ.) Low drain-source ON resistance R = 3.7 m... See More ⇒
tpc8010-h.pdf
TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Q = 18 nC (typ.) g Low drain-source ON resistance RDS (ON) = 12 m (typ.) High fo... See More ⇒
tpc8018-h.pdf
TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit mm Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 12 nC (typ.) Low drain-source ON... See More ⇒
Detailed specifications: TPC8004, TPC8006-H, TPC8009-H, TPC8010-H, TPC8012-H, TPC8013-H, TPC8014, TPC8016-H, IRF540N, TPC8018-H, TPC8020-H, TPC8021-H, TPC8022-H, TPC8024-H, TPC8025, TPC8026, TPC8030
Keywords - TPC8017-H MOSFET specs
TPC8017-H cross reference
TPC8017-H equivalent finder
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TPC8017-H substitution
TPC8017-H replacement
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History: IPA60R120P7
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