BUK7635-55 Todos los transistores

 ..1. Size:55K  philips
 buk7635-55 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. Using ID Drain current (DC) 34 A trench technology the devi

 0.1. Size:313K  philips
 buk7535-55a buk7635-55a.pdf

BUK7535-55A; BUK7635-55A TrenchMOS standard level FET Rev. 01 10 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability BUK7535-55A in SOT78 (TO-220AB) BUK7635-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS te

 0.2. Size:760K  nxp
 buk7635-55a.pdf

BUK7635-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

 6.1. Size:337K  philips
 buk7535-100a buk7635-100a.pdf

 6.2. Size:902K  nxp
 buk7635-100a.pdf

BUK7635-100A N-channel TrenchMOS standard level FET Rev. 02 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1