BUK7635-55
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK7635-55
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 85
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SOT404
BUK7635-55
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK7635-55
Datasheet (PDF)
..1. Size:55K philips
buk7635-55 2.pdf 
Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 34 Atrench technology the devi
0.1. Size:313K philips
buk7535-55a buk7635-55a.pdf
BUK7535-55A; BUK7635-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-55A in SOT78 (TO-220AB)BUK7635-55A in SOT404 (D 2-PAK).2. Features TrenchMOS te
0.2. Size:760K nxp
buk7635-55a.pdf
BUK7635-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2
6.1. Size:337K philips
buk7535-100a buk7635-100a.pdf
BUK7535-100A;BUK7635-100ATrenchMOS standard level FETRev. 01 02 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-100A in SOT78 (TO-220AB)BUK7635-100A in SOT404 (D2-PAK).2. Features TrenchMOS
6.2. Size:902K nxp
buk7635-100a.pdf
BUK7635-100AN-channel TrenchMOS standard level FETRev. 02 18 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1
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