P0903BDG Specs and Replacement

Type Designator: P0903BDG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO252

P0903BDG substitution

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P0903BDG datasheet

 ..1. Size:532K  unikc
 p0903bdg.pdf pdf_icon

P0903BDG

P0903BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9.5m @VGS = 10V 25V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1... See More ⇒

 7.1. Size:455K  unikc
 p0903bdl.pdf pdf_icon

P0903BDG

P0903BDL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 9.5m @VGS = 10V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC = 25 C 56 ID Continuous Drain Current TC = 100 C 35 A IDM 160 Pulsed Drain Current... See More ⇒

 7.2. Size:493K  unikc
 p0903bda.pdf pdf_icon

P0903BDG

P0903BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 56A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 56 ID Continuous Drain Current TC= 100 C 35 A IDM 160 Pulsed Drain Current1 ... See More ⇒

 7.3. Size:521K  unikc
 p0903bd.pdf pdf_icon

P0903BDG

P0903BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 9m @VGS = 10V 30V 57A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 57 ID Continuous Drain Current TC= 100 C 36 A IDM 160 Pulsed Drain Current1 I... See More ⇒

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Detailed specifications: P0808ATG, P082ABD8, P0850AT, P0850ATF, P085AATX, P0903BD, P0903BDA, P0903BDB, IRFB31N20D, P0903BDL, P0603BD, P0603BDB, P0603BDD, P0603BDF, P0603BDG, P0603BDL, P0603BEAD

Keywords - P0903BDG MOSFET specs

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