All MOSFET. P0903BDG Datasheet

 

P0903BDG MOSFET. Datasheet pdf. Equivalent

Type Designator: P0903BDG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 49 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0095 Ohm

Package: TO252

P0903BDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0903BDG Datasheet (PDF)

..1. p0903bdg.pdf Size:532K _unikc

P0903BDG P0903BDG

P0903BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V25V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C56IDContinuous Drain CurrentTC= 100 C35AIDM160Pulsed Drain Current1

7.1. p0903bda.pdf Size:493K _unikc

P0903BDG P0903BDG

P0903BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C56IDContinuous Drain CurrentTC= 100 C35AIDM160Pulsed Drain Current1

7.2. p0903bdb.pdf Size:465K _unikc

P0903BDG P0903BDG

P0903BDBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 59ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C59IDContinuous Drain CurrentTC= 100 C37AIDM150Pulsed Drain Current1

 7.3. p0903bdl.pdf Size:455K _unikc

P0903BDG P0903BDG

P0903BDLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 9.5m @VGS = 10V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C56IDContinuous Drain CurrentTC = 100 C35AIDM160Pulsed Drain Current

7.4. p0903bd.pdf Size:521K _unikc

P0903BDG P0903BDG

P0903BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 57ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C57IDContinuous Drain CurrentTC= 100 C36AIDM160Pulsed Drain Current1I

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , IRFP250N , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top