P0903BDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P0903BDG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 49 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de P0903BDG MOSFET
P0903BDG Datasheet (PDF)
p0903bdg.pdf

P0903BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9.5m @VGS = 10V25V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C56IDContinuous Drain CurrentTC= 100 C35AIDM160Pulsed Drain Current1
p0903bdl.pdf

P0903BDLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 9.5m @VGS = 10V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC = 25 C56IDContinuous Drain CurrentTC = 100 C35AIDM160Pulsed Drain Current
p0903bda.pdf

P0903BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 56ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C56IDContinuous Drain CurrentTC= 100 C35AIDM160Pulsed Drain Current1
p0903bd.pdf

P0903BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID9m @VGS = 10V30V 57ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C57IDContinuous Drain CurrentTC= 100 C36AIDM160Pulsed Drain Current1I
Otros transistores... P0808ATG , P082ABD8 , P0850AT , P0850ATF , P085AATX , P0903BD , P0903BDA , P0903BDB , IRF730 , P0903BDL , P0603BD , P0603BDB , P0603BDD , P0603BDF , P0603BDG , P0603BDL , P0603BEAD .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0802PTL | JMSH0802PE | JMSH0802MTL | JMSH0802ME | JMSH0802MC | JMSH0801PTL | JMSH0801PE | JMSH0704PE | JMSH0704PC | JMSH0702PE | JMSH040SPTSQ | JMSH040SPGQ | JMSH040SPG | JMSH040SAGQ | JMSH040SAG | JMH65R110PPLNFD
Popular searches
ss8550 | mje15033 | 2sc945 datasheet | a92 transistor | rfp50n06 | bd140 datasheet | tip2955 | tip35