Справочник MOSFET. BUK7635-55

 

BUK7635-55 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK7635-55
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
   Тип корпуса: SOT404

 Аналог (замена) для BUK7635-55

 

 

BUK7635-55 Datasheet (PDF)

 ..1. Size:55K  philips
buk7635-55 2.pdf

BUK7635-55
BUK7635-55

Philips Semiconductors Product specification TrenchMOS transistor BUK7635-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 34 Atrench technology the devi

 0.1. Size:313K  philips
buk7535-55a buk7635-55a.pdf

BUK7635-55
BUK7635-55

BUK7535-55A; BUK7635-55ATrenchMOS standard level FETRev. 01 10 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-55A in SOT78 (TO-220AB)BUK7635-55A in SOT404 (D 2-PAK).2. Features TrenchMOS te

 0.2. Size:760K  nxp
buk7635-55a.pdf

BUK7635-55
BUK7635-55

BUK7635-55AN-channel TrenchMOS standard level FETRev. 02 27 January 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2

 6.1. Size:337K  philips
buk7535-100a buk7635-100a.pdf

BUK7635-55
BUK7635-55

BUK7535-100A;BUK7635-100ATrenchMOS standard level FETRev. 01 02 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7535-100A in SOT78 (TO-220AB)BUK7635-100A in SOT404 (D2-PAK).2. Features TrenchMOS

 6.2. Size:902K  nxp
buk7635-100a.pdf

BUK7635-55
BUK7635-55

BUK7635-100AN-channel TrenchMOS standard level FETRev. 02 18 February 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1

Другие MOSFET... BUK7608-55 , BUK7610-30 , BUK7614-30 , BUK7618-30 , BUK7618-55 , BUK7620-55 , BUK7624-55 , BUK7628-55 , IRFZ46N , BUK7675-55 , BUK78150-55 , BUK7830-30 , BUK7840-55 , BUK7880-55 , BUK9120-48TC , BUK9506-30 , BUK9508-55 .

 

 
Back to Top