TPC8033-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC8033-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.3 nS
Cossⓘ - Capacitancia de salida: 628 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de TPC8033-H MOSFET
TPC8033-H Datasheet (PDF)
tpc8033-h.pdf

TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8033-H High Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 9.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.0 m (
tpc8037-h.pdf

TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
tpc8032-h.pdf

TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8032-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 m
tpc8038-h.pdf

TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
Otros transistores... TPC8021-H , TPC8022-H , TPC8024-H , TPC8025 , TPC8026 , TPC8030 , TPC8031-H , TPC8032-H , IRF3710 , TPC8034-H , TPC8035-H , TPC8036-H , TPC8037-H , TPC8038-H , TPC8039-H , TPC8040-H , TPC8054-H .
History: STP200N4F3 | SHD225409 | WMB014N04LG4 | AMA920N | TPC8062-H | FDD9411L-F085
History: STP200N4F3 | SHD225409 | WMB014N04LG4 | AMA920N | TPC8062-H | FDD9411L-F085



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