TPC8033-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPC8033-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4.3 ns
Cossⓘ - Выходная емкость: 628 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0053 Ohm
Тип корпуса: SOP8
- подбор MOSFET транзистора по параметрам
TPC8033-H Datasheet (PDF)
tpc8033-h.pdf

TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8033-H High Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 9.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.0 m (
tpc8037-h.pdf

TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
tpc8032-h.pdf

TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8032-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 m
tpc8038-h.pdf

TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: RU6881R | APT30M90AVR | RQ3E150GN | 2N4338 | SI1402DH | 2SK3278I | IRFE9210
History: RU6881R | APT30M90AVR | RQ3E150GN | 2N4338 | SI1402DH | 2SK3278I | IRFE9210



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