TPC8033-H MOSFET. Datasheet pdf. Equivalent
Type Designator: TPC8033-H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 4.3 nS
Cossⓘ - Output Capacitance: 628 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: SOP8
TPC8033-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TPC8033-H Datasheet (PDF)
tpc8033-h.pdf
TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8033-H High Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 9.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.0 m (
tpc8037-h.pdf
TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
tpc8032-h.pdf
TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8032-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 m
tpc8038-h.pdf
TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
tpc8034-h.pdf
TPC8034-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8034-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.6 m
tpc8030.pdf
TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren
tpc8031-h.pdf
TPC8031-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8031-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 10.1 m
tpc8036-h.pdf
TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 13 nC (typ.) SW Low drain-source ON-resistance: R = 3.1 m (typ.
tpc8035-h.pdf
TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Q = 17 nC (typ.) SW Low drain-source ON-resistance: R = 2.3 m (typ.)
tpc8039-h.pdf
TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 8.6 nC (typ.) SW Low drain-source ON-resistance: R = 4.1 m (typ
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