TPC8112 Todos los transistores

 

TPC8112 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPC8112
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de TPC8112 MOSFET

   - Selección ⓘ de transistores por parámetros

 

TPC8112 Datasheet (PDF)

 ..1. Size:274K  toshiba
 tpc8112.pdf pdf_icon

TPC8112

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8112 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0m (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage curren

 8.1. Size:214K  toshiba
 tpc8117.pdf pdf_icon

TPC8112

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8117 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 m (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

 8.2. Size:216K  toshiba
 tpc8110.pdf pdf_icon

TPC8112

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 17 m (typ.) DS (ON) High forward transfer admittance: |Y | = 16 S (typ.) fs Low leakage

 8.3. Size:278K  toshiba
 tpc8114.pdf pdf_icon

TPC8112

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage curre

MOSTRAR MÁS

Otros transistores... TPC8060-H , TPC8104-H , TPC8105-H , TPC8107 , TPC8108 , TPC8109 , TPC8110 , TPC8111 , IRF1010E , TPC8113 , TPC8114 , TPC8115 , TPC8116-H , TPC8117 , TPC8118 , TPC8119 , TPC8121 .

History: IPB114N03LG | QM4302D | SM4066CSK

 

 
Back to Top

 


 
.