Справочник MOSFET. TPC8112

 

TPC8112 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8112
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 13 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 130 nC
   Время нарастания (tr): 11 ns
   Выходная емкость (Cd): 1050 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.006 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8112

 

 

TPC8112 Datasheet (PDF)

 ..1. Size:274K  toshiba
 tpc8112.pdf

TPC8112 TPC8112

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8112 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0m (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage curren

 8.1. Size:214K  toshiba
 tpc8117.pdf

TPC8112 TPC8112

TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8117 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance : RDS (ON) = 3.0 m (typ.) High forward transfer admittance : |Yfs| = 54 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -

 8.2. Size:216K  toshiba
 tpc8110.pdf

TPC8112 TPC8112

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: R = 17 m (typ.) DS (ON) High forward transfer admittance: |Y | = 16 S (typ.) fs Low leakage

 8.3. Size:278K  toshiba
 tpc8114.pdf

TPC8112 TPC8112

TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8114 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 m (typ.) High forward transfer admittance: |Yfs| = 47 S (typ.) Low leakage curre

 8.4. Size:280K  toshiba
 tpc8115.pdf

TPC8112 TPC8112

TPC8115 PMOS (U-MOS IV) TPC8115 2 : mm PC : RDS (ON) = 6.5 m () : |Yfs| = 40 S (

 8.5. Size:279K  toshiba
 tpc8116-h.pdf

TPC8112 TPC8112

TPC8116-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8116-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.7 nC (typ.) Low

 8.6. Size:231K  toshiba
 tpc8111.pdf

TPC8112 TPC8112

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage curre

 8.7. Size:256K  toshiba
 tpc8119.pdf

TPC8112 TPC8112

TPC8119 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) TPC8119 Lithium-Ion Battery Applications Unit: mmLoad switch Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 10 m (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS

 8.8. Size:196K  toshiba
 tpc8118.pdf

TPC8112 TPC8112

TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) TPC8118 Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement mode: Vth = -

 8.9. Size:273K  toshiba
 tpc8113.pdf

TPC8112 TPC8112

TPC8113 PMOS (U-MOS IV) TPC8113 2 : mm PC : RDS (ON) = 8 m () : |Yfs| = 23 S (

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