TPC8112 Specs and Replacement
Type Designator: TPC8112
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SOP8
TPC8112 substitution
- MOSFET ⓘ Cross-Reference Search
TPC8112 datasheet
tpc8112.pdf
TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8112 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 5.0m (typ.) High forward transfer admittance Yfs = 31 S (typ.) Low leakage curren... See More ⇒
tpc8117.pdf
TPC8117 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8117 Lithium Ion Battery Applications Unit mm Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) = 3.0 m (typ.) High forward transfer admittance Yfs = 54 S (typ.) Low leakage current IDSS = -10 A (max) (VDS = -... See More ⇒
tpc8110.pdf
TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 17 m (typ.) DS (ON) High forward transfer admittance Y = 16 S (typ.) fs Low leakage ... See More ⇒
tpc8114.pdf
TPC8114 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) TPC8114 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 3.1 m (typ.) High forward transfer admittance Yfs = 47 S (typ.) Low leakage curre... See More ⇒
Detailed specifications: TPC8060-H, TPC8104-H, TPC8105-H, TPC8107, TPC8108, TPC8109, TPC8110, TPC8111, IRF9540N, TPC8113, TPC8114, TPC8115, TPC8116-H, TPC8117, TPC8118, TPC8119, TPC8121
Keywords - TPC8112 MOSFET specs
TPC8112 cross reference
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History: BLM07N06-D
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