TPC8A02-H Todos los transistores

 

TPC8A02-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPC8A02-H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 950 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: SOP8

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TPC8A02-H datasheet

 ..1. Size:255K  toshiba
 tpc8a02-h.pdf pdf_icon

TPC8A02-H

TPC8A02-H OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPC8A02-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications Built-in Schottky barrier diode Low forward voltage V = 0.6V (max) DSF High-speed switching. Small gate

 8.1. Size:279K  toshiba
 tpc8a07-h.pdf pdf_icon

TPC8A02-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.2. Size:316K  toshiba
 tpc8a01.pdf pdf_icon

TPC8A02-H

TPC8A01 Q1 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) Q2 TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) TPC8A01 Unit mm DC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage V =0.6V(Max.) DSF Small footprint due to

 8.3. Size:217K  toshiba
 tpc8a04-h.pdf pdf_icon

TPC8A02-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 13 nC (ty

MOSTRAR MÁS

Otros transistores... TPC8301 , TPC8302 , TPC8303 , TPC8401 , TPC8404 , TPC8405 , TPC8406-H , TPC8A01 , 10N65 , TPC8A07-H , TPCA8003-H , TPCA8004-H , TPCA8005-H , TPCA8009-H , TPCA8012-H , TPCA8014-H , TPCA8015-H .

 

 

 

 

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