Справочник MOSFET. TPC8A02-H

 

TPC8A02-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPC8A02-H
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.3 V
   Максимально допустимый постоянный ток стока |Id|: 16 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 19 nC
   Время нарастания (tr): 6 ns
   Выходная емкость (Cd): 950 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0056 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для TPC8A02-H

 

 

TPC8A02-H Datasheet (PDF)

 ..1. Size:255K  toshiba
 tpc8a02-h.pdf

TPC8A02-H TPC8A02-H

TPC8A02-H OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPC8A02-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications Built-in Schottky barrier diode Low forward voltage: V = 0.6V (max) DSF High-speed switching. Small gate

 8.1. Size:279K  toshiba
 tpc8a07-h.pdf

TPC8A02-H TPC8A02-H

TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: (Q1) QSW = 3.4 nC (typ.) (Q2) QSW =

 8.2. Size:316K  toshiba
 tpc8a01.pdf

TPC8A02-H TPC8A02-H

TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(UMOS) TPC8A01 Unit: mmDC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: V =0.6V(Max.) DSF Small footprint due to

 8.3. Size:217K  toshiba
 tpc8a04-h.pdf

TPC8A02-H TPC8A02-H

TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 13 nC (ty

 8.4. Size:234K  toshiba
 tpc8a06-h.pdf

TPC8A02-H TPC8A02-H

TPC8A06-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A06-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 4.5

 8.5. Size:213K  toshiba
 tpc8a03-h.pdf

TPC8A02-H TPC8A02-H

TPC8A03-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A03-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Built-in schottky barrier diode Low forward voltage: VDSF = -0.6 V (max) High-speed switching Small gate charge: QSW = 8.4 nC (t

 8.6. Size:231K  toshiba
 tpc8a05-h.pdf

TPC8A02-H TPC8A02-H

TPC8A05-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A05-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Built-in schottky barrier diode Low forward voltage: V = 0.6 V (max) DSF High-speed switching Small gate charge: QSW = 3.7

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