TPC8A02-H Specs and Replacement
Type Designator: TPC8A02-H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 950 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: SOP8
TPC8A02-H substitution
- MOSFET ⓘ Cross-Reference Search
TPC8A02-H datasheet
tpc8a02-h.pdf
TPC8A02-H OSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS ) TPC8A02-H High-Efficiency DC/DC Converter Applications Unit mm Notebook PC Applications Portable-Equipment Applications Built-in Schottky barrier diode Low forward voltage V = 0.6V (max) DSF High-speed switching. Small gate... See More ⇒
tpc8a07-h.pdf
TPC8A07-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V -H) TPC8A07-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge (Q1) QSW = 3.4 nC (typ.) (Q2) QSW = ... See More ⇒
tpc8a01.pdf
TPC8A01 Q1 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) Q2 TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U MOS ) TPC8A01 Unit mm DC-DC CONVERTER Notebook PC Portable Machines and Tools Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage V =0.6V(Max.) DSF Small footprint due to ... See More ⇒
tpc8a04-h.pdf
TPC8A04-H TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (U-MOS V-H) TPC8A04-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit mm Portable Equipment Applications Built-in schottky barrier diode Low forward voltage VDSF = -0.6 V (max) High-speed switching Small gate charge QSW = 13 nC (ty... See More ⇒
Detailed specifications: TPC8301, TPC8302, TPC8303, TPC8401, TPC8404, TPC8405, TPC8406-H, TPC8A01, 10N65, TPC8A07-H, TPCA8003-H, TPCA8004-H, TPCA8005-H, TPCA8009-H, TPCA8012-H, TPCA8014-H, TPCA8015-H
Keywords - TPC8A02-H MOSFET specs
TPC8A02-H cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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