TPCA8012-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPCA8012-H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 40 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia entre drenaje y fuente RDS(on): 0.0049 Ohm
Paquete / Cubierta: SOP-ADVANCE
Búsqueda de reemplazo de MOSFET TPCA8012-H
TPCA8012-H Datasheet (PDF)
tpca8012-h.pdf
TPCA8012-H NMOS (U-MOS-H) TPCA8012-H DC/DC : mm PC 0.40.11.270.50.10.05 M A 8 50.150.05 41 0.595
tpca8019-h.pdf
TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 15
tpca8015-h.pdf
TPCA8015-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC-DC Converter Applications Unit: mm1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to a small and thin package 0.15 0.05 High-speed switching Small gate charge: QSW = 13 nC (typ.) 40.595 1 Low drain-source ON-resistance:
tpca8014-h.pdf
TPCA8014-H NMOS (U-MOSIII) TPCA8014-H DCDC : mm PC 0.40.11.270.50.10.05 M A8 5 0.150.05 41 0.595
tpca8018-h.pdf
TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8018-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 9.3
tpca8011-h.pdf
TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable-Equipment Applications 0.150.05 Small footprint due to a small and thin package High speed switching 41 0.595 Small gate
tpca8016-h.pdf
TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to small and thin package High-speed switching 41 0.595 Small gate c
tpca8010-h.pdf
TPCA8010-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCA8010-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications 0.40.11.270.05 M ADC-DC Converter Applications 8 50.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 3.7 nC (typ.)
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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