All MOSFET. TPCA8012-H Datasheet

 

TPCA8012-H Datasheet and Replacement


   Type Designator: TPCA8012-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: SOP-ADVANCE
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TPCA8012-H Datasheet (PDF)

 ..1. Size:281K  toshiba
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TPCA8012-H

TPCA8012-H NMOS (U-MOS-H) TPCA8012-H DC/DC : mm PC 0.40.11.270.50.10.05 M A 8 50.150.05 41 0.595

 7.1. Size:195K  toshiba
tpca8019-h.pdf pdf_icon

TPCA8012-H

TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 15

 7.2. Size:196K  toshiba
tpca8015-h.pdf pdf_icon

TPCA8012-H

TPCA8015-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC-DC Converter Applications Unit: mm1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to a small and thin package 0.15 0.05 High-speed switching Small gate charge: QSW = 13 nC (typ.) 40.595 1 Low drain-source ON-resistance:

 7.3. Size:287K  toshiba
tpca8014-h.pdf pdf_icon

TPCA8012-H

TPCA8014-H NMOS (U-MOSIII) TPCA8014-H DCDC : mm PC 0.40.11.270.50.10.05 M A8 5 0.150.05 41 0.595

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CHM4501JGP | HAT1040T | CED01N7 | HY1804V | AOI538 | OSG60R2K8DF | JCS4N60FB

Keywords - TPCA8012-H MOSFET datasheet

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