TPCA8012-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPCA8012-H
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22 nC
trⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0049 Ohm
Тип корпуса: SOP-ADVANCE
Аналог (замена) для TPCA8012-H
TPCA8012-H Datasheet (PDF)
tpca8012-h.pdf
TPCA8012-H NMOS (U-MOS-H) TPCA8012-H DC/DC : mm PC 0.40.11.270.50.10.05 M A 8 50.150.05 41 0.595
tpca8019-h.pdf
TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 15
tpca8015-h.pdf
TPCA8015-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8015-H High-Efficiency DC-DC Converter Applications Unit: mm1.27 0.4 0.1 8 0.05 M A 5 Small footprint due to a small and thin package 0.15 0.05 High-speed switching Small gate charge: QSW = 13 nC (typ.) 40.595 1 Low drain-source ON-resistance:
tpca8014-h.pdf
TPCA8014-H NMOS (U-MOSIII) TPCA8014-H DCDC : mm PC 0.40.11.270.50.10.05 M A8 5 0.150.05 41 0.595
tpca8018-h.pdf
TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCA8018-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 9.3
tpca8011-h.pdf
TPCA8011-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H High Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable-Equipment Applications 0.150.05 Small footprint due to a small and thin package High speed switching 41 0.595 Small gate
tpca8016-h.pdf
TPCA8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8016-H High-Speed and High-Efficiency DC-DC Converters Unit: mmNotebook PC Applications 0.40.11.270.50.10.05 M A8 5Portable Equipment Applications 0.150.05 Small footprint due to small and thin package High-speed switching 41 0.595 Small gate c
tpca8010-h.pdf
TPCA8010-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH-MOS) TPCA8010-H High-Speed Switching Applications Unit: mmSwitching Regulator Applications 0.40.11.270.05 M ADC-DC Converter Applications 8 50.150.05 Small footprint due to a small and thin package High-speed switching 41 0.595 Small gate charge: QSW = 3.7 nC (typ.)
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918