TPCF8001 Todos los transistores

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TPCF8001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCF8001

Código: F2A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 3.8 nS

Conductancia de drenaje-sustrato (Cd): 190 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: VS8

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TPCF8001 Datasheet (PDF)

1.1. tpcf8001.pdf Size:252K _toshiba2

TPCF8001
TPCF8001

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8 S (typ.) • Low leakage current: IDSS = 10 µA (max.) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (V

3.1. tpcf8003 en datasheet 100114.pdf Size:232K _toshiba2

TPCF8001
TPCF8001

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS?) TPCF8003 Notebook PC Applications Unit: mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 m? (typ.) (VGS= 4.5V) Low leakage current: IDSS = 10 ?A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID

 5.1. tpcf8304.pdf Size:283K _toshiba2

TPCF8001
TPCF8001

TPCF8304 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV) TPCF8304 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 60 m? (typ.) High forward transfer admittance: |Yfs| = 5.9 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement model: Vth = -0.8 to -2.0 V, (VDS = -10 V,

5.2. tpcf8303.pdf Size:101K _toshiba2

TPCF8001
TPCF8001

TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Y | = 6.0 S (typ.) fs • Low leakage current: I = -10 µA (max) (V = -20 V) DSS DS • Enhancement-model: V = -0.45 to -

 5.3. tpcf8107 en datasheet 100716.pdf Size:228K _toshiba2

TPCF8001
TPCF8001

TPCF8107 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8107 TPCF8107 TPCF8107 TPCF8107 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 22 m? (typ.

5.4. tpcf8103.pdf Size:295K _toshiba2

TPCF8001
TPCF8001

TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to -1.2 V

 5.5. tpcf8402 en datasheet 091210.pdf Size:312K _toshiba2

TPCF8001
TPCF8001

TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF8402 Portable Equipment Applications Motor Drive Applications Unit: mm DC-DC Converter Applications Low drain-source ON resistance : P Channel RDS (ON) = 60 m? (typ.) N Channel RDS (ON) = 38 m? (typ.) High forward transfer admittance : P Channel |Yfs| = 5.9 S (typ.) N Channel

5.6. tpcf8102.pdf Size:224K _toshiba2

TPCF8001
TPCF8001

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement mode: Vth = -0.5 to -1.2 V

5.7. tpcf8b01 en datasheet 090929.pdf Size:305K _toshiba2

TPCF8001
TPCF8001

TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 72 m? (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS =-10 ?A (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to-1.

5.8. tpcf8101.pdf Size:252K _toshiba2

TPCF8001
TPCF8001

TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 22 m? (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -12 V) Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V

5.9. tpcf8104.pdf Size:264K _toshiba2

TPCF8001
TPCF8001

TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) • Enhancement mode: Vth = -0.8 to -2.0 V

5.10. tpcf8105 en datasheet 100913.pdf Size:223K _toshiba2

TPCF8001
TPCF8001

TPCF8105 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8105 TPCF8105 TPCF8105 TPCF8105 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 24 m? (typ.) (VGS = -4.5 V)

5.11. tpcf8201 en datasheet 090929.pdf Size:220K _toshiba2

TPCF8001
TPCF8001

TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8201 Notebook PC Applications Unit: mm Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 38 m? (typ.) High forward transfer admittance: |Yfs| = 5.4 S (typ.) Low leakage current: IDSS = 10 ?A (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID =

5.12. tpcf8108 en datasheet 100823.pdf Size:219K _toshiba2

TPCF8001
TPCF8001

TPCF8108 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8108 TPCF8108 TPCF8108 TPCF8108 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 21 m? (typ.

5.13. tpcf8302.pdf Size:261K _toshiba2

TPCF8001
TPCF8001

TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Unit: mm Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.) • Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) • Enhancement mode: Vth = -0.5 to -1.2 V

5.14. tpcf8305 en datasheet 100729.pdf Size:238K _toshiba2

TPCF8001
TPCF8001

TPCF8305 MOSFETs Silicon P-Channel MOS (U-MOS?) TPCF8305 TPCF8305 TPCF8305 TPCF8305 1. Applications 1. Applications 1. Applications 1. Applications Notebook PCs Mobile Handsets 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 m? (typ.) (VGS = -4.5 V) (3) Low leakage current: ID

Otros transistores... TPCA8121 , TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , IRF3205 , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 .

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