TPCF8001 Todos los transistores

 

TPCF8001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCF8001
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: VS8
 

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TPCF8001 Datasheet (PDF)

 ..1. Size:252K  toshiba
 tpcf8001.pdf pdf_icon

TPCF8001

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (V

 7.1. Size:232K  toshiba
 tpcf8003.pdf pdf_icon

TPCF8001

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCF8003 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2

 7.2. Size:229K  toshiba
 tpcf8004.pdf pdf_icon

TPCF8001

TPCF8004MOSFETs Silicon N-Channel MOS (U-MOS)TPCF8004TPCF8004TPCF8004TPCF80041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 10 V)(3) Low leakage curr

 7.3. Size:229K  toshiba
 tpcf8002.pdf pdf_icon

TPCF8001

TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V

MOSTRAR MÁS

Otros transistores... TPCA8121 , TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , IRFZ44N , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 .

History: AOW29S50 | UPA1792G

 

 
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