All MOSFET. TPCF8001 Datasheet

 

TPCF8001 MOSFET. Datasheet pdf. Equivalent


   Type Designator: TPCF8001
   Marking Code: F2A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25.4 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: VS8

 TPCF8001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TPCF8001 Datasheet (PDF)

 ..1. Size:252K  toshiba
 tpcf8001.pdf

TPCF8001 TPCF8001

TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit: mmPortable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 8 S (typ.) Low leakage current: IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (V

 7.1. Size:232K  toshiba
 tpcf8003.pdf

TPCF8001 TPCF8001

TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCF8003 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2

 7.2. Size:229K  toshiba
 tpcf8004.pdf

TPCF8001 TPCF8001

TPCF8004MOSFETs Silicon N-Channel MOS (U-MOS)TPCF8004TPCF8004TPCF8004TPCF80041. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 19 m (typ.) (VGS = 10 V)(3) Low leakage curr

 7.3. Size:229K  toshiba
 tpcf8002.pdf

TPCF8001 TPCF8001

TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance: RDS (ON) = 16 m (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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