TPCF8001. Аналоги и основные параметры
Наименование производителя: TPCF8001
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.8 ns
Cossⓘ - Выходная емкость: 190 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: VS8
Аналог (замена) для TPCF8001
- подборⓘ MOSFET транзистора по параметрам
TPCF8001 даташит
tpcf8001.pdf
TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPCF8001 Notebook PC Applications Unit mm Portable Equipment Applications Low drain-source ON resistance RDS (ON) = 19 m (typ.) High forward transfer admittance Yfs = 8 S (typ.) Low leakage current IDSS = 10 A (max.) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (V
tpcf8003.pdf
TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8003 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON-resistance RDS (ON) =14 m (typ.) VGS= 4.5V Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement mode Vth = 0.5 to 1.2
tpcf8004.pdf
TPCF8004 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCF8004 TPCF8004 TPCF8004 TPCF8004 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 19 m (typ.) (VGS = 10 V) (3) Low leakage curr
tpcf8002.pdf
TPCF8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCF8002 Notebook PC Applications Unit mm Portable Equipment Applications Small footprint due to a small and thin package Low drain-source ON resistance RDS (ON) = 16 m (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode Vth = 1.3 to 2.5 V (VDS = 10 V
Другие MOSFET... TPCA8121 , TPCA8A01-H , TPCC8001-H , TPCC8002-H , TPCC8003-H , TPCC8005-H , TPCC8006-H , TPCC8102 , IRFZ44N , TPCF8102 , TPCF8103 , TPCF8104 , TPCF8302 , TPCF8303 , TPCL4201 , TPCL4202 , TPCL4203 .
History: AP70WN2K8L | AP75T12GI
History: AP70WN2K8L | AP75T12GI
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Список транзисторов
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