TPCS8210 Todos los transistores

 

TPCS8210 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCS8210
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TSSOP8
     - Selección de transistores por parámetros

 

TPCS8210 Datasheet (PDF)

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TPCS8210

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement

 7.1. Size:220K  toshiba
 tpcs8211.pdf pdf_icon

TPCS8210

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage cur

 7.2. Size:223K  toshiba
 tpcs8214.pdf pdf_icon

TPCS8210

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCS8214 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode:

 7.3. Size:220K  toshiba
 tpcs8212.pdf pdf_icon

TPCS8210

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP98T03GP | HCS80R1K4ST

 

 
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