TPCS8210 Todos los transistores

 

TPCS8210 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TPCS8210

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.5 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TSSOP8

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TPCS8210 datasheet

 ..1. Size:241K  toshiba
tpcs8210.pdf pdf_icon

TPCS8210

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement

 7.1. Size:220K  toshiba
tpcs8211.pdf pdf_icon

TPCS8210

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage cur

 7.2. Size:223K  toshiba
tpcs8214.pdf pdf_icon

TPCS8210

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCS8214 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 10.5m (typ.) High forward transfer admittance Yfs = 10S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode

 7.3. Size:220K  toshiba
tpcs8212.pdf pdf_icon

TPCS8210

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-

Otros transistores... TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 , TPCS8208 , TPCS8209 , K3569 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 , TPCT4202 .

 

 

 


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