Справочник MOSFET. TPCS8210

 

TPCS8210 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPCS8210
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: TSSOP8
 

 Аналог (замена) для TPCS8210

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPCS8210 Datasheet (PDF)

 ..1. Size:241K  toshiba
 tpcs8210.pdf pdf_icon

TPCS8210

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 19 m (typ.) DS (ON) High forward transfer admittance: |Y | = 9.2 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement

 7.1. Size:220K  toshiba
 tpcs8211.pdf pdf_icon

TPCS8210

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit: mmNotebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage cur

 7.2. Size:223K  toshiba
 tpcs8214.pdf pdf_icon

TPCS8210

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TPCS8214 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 10.5m (typ.) High forward transfer admittance: |Yfs| = 10S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode:

 7.3. Size:220K  toshiba
 tpcs8212.pdf pdf_icon

TPCS8210

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: R = 16 m (typ.) DS (ON) High forward transfer admittance: |Y | = 11 S (typ.) fs Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement-

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TPCS8101 , TPCS8102 , TPCS8104 , TPCS8105 , TPCS8204 , TPCS8205 , TPCS8208 , TPCS8209 , SPP20N60C3 , TPCS8211 , TPCS8212 , TPCS8213 , TPCS8214 , TPCS8302 , TPCS8303 , TPCT4201 , TPCT4202 .

History: CSFR3N60LP | AP10N4R5S

 

 
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