TPCS8210 PDF and Equivalents Search

 

TPCS8210 Specs and Replacement

Type Designator: TPCS8210

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TSSOP8

TPCS8210 substitution

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TPCS8210 datasheet

 ..1. Size:241K  toshiba
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TPCS8210

TPCS8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8210 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement... See More ⇒

 7.1. Size:220K  toshiba
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TPCS8210

TPCS8211 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8211 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage cur... See More ⇒

 7.2. Size:223K  toshiba
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TPCS8210

TPCS8214 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) TPCS8214 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance RDS (ON) = 10.5m (typ.) High forward transfer admittance Yfs = 10S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 30 V) Enhancement mode ... See More ⇒

 7.3. Size:220K  toshiba
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TPCS8210

TPCS8212 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8212 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 16 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-... See More ⇒

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Detailed specifications: TPCS8101, TPCS8102, TPCS8104, TPCS8105, TPCS8204, TPCS8205, TPCS8208, TPCS8209, K3569, TPCS8211, TPCS8212, TPCS8213, TPCS8214, TPCS8302, TPCS8303, TPCT4201, TPCT4202

Keywords - TPCS8210 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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