SSM3J16TE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSM3J16TE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TESM

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SSM3J16TE Datasheet (PDF)

..1. Size:180K toshiba
ssm3j16te.pdf

SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : Ron = 8 (max) (@VGS = -4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-So

7.1. Size:180K toshiba
ssm3j16fv.pdf

SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25C) 0.80.05

7.2. Size:203K toshiba
ssm3j16ct.pdf

SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm0.60.05 Small package 0.50.03 Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25

7.3. Size:222K toshiba
ssm3j16fu.pdf

SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

7.4. Size:185K toshiba
ssm3j16fs.pdf

SSM3J16FS TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FS High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

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