SSM3J16TE - аналоги, параметры транзистора - Справочник транзисторов

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SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance Ron = 8 (max) (@VGS = -4 V) Ron = 12 (max) (@VGS = -2.5 V) Ron = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-So

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SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit mm Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.2 0.05 Absolute Maximum Ratings (Ta = 25 C) 0.8 0.05

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SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type( -MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit mm Small package Low on-resistance RDS(ON) = 8 (max) (@VGS = -4 V) RDS(ON) = 12 (max) (@VGS = -2.5 V) RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol