All MOSFET. SSM3J16TE Datasheet

 

SSM3J16TE Datasheet and Replacement


   Type Designator: SSM3J16TE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TESM
 

 SSM3J16TE substitution

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SSM3J16TE Datasheet (PDF)

 ..1. Size:180K  toshiba
 ssm3j16te.pdf pdf_icon

SSM3J16TE

SSM3J16TE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : Ron = 8 (max) (@VGS = -4 V) : Ron = 12 (max) (@VGS = -2.5 V) : Ron = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-So

 7.1. Size:180K  toshiba
 ssm3j16fv.pdf pdf_icon

SSM3J16TE

SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FV High Speed Switching Applications Analog Switch Applications Small package Unit: mm Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) 1.20.05Absolute Maximum Ratings (Ta = 25C) 0.80.05

 7.2. Size:203K  toshiba
 ssm3j16ct.pdf pdf_icon

SSM3J16TE

SSM3J16CT TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16CT High Speed Switching Applications Analog Switch Applications Unit: mm0.60.05 Small package 0.50.03 Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25

 7.3. Size:222K  toshiba
 ssm3j16fu.pdf pdf_icon

SSM3J16TE

SSM3J16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(-MOSVI) SSM3J16FU High Speed Switching Applications Analog Switch Applications Unit: mm Small package Low on-resistance : RDS(ON) = 8 (max) (@VGS = -4 V) : RDS(ON) = 12 (max) (@VGS = -2.5 V) : RDS(ON) = 45 (max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

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Datasheet: TPCT4204 , 2SJ148 , 2SJ167 , 2SJ342 , 2SK1061 , 2SK1825 , 2SK982 , SSM3J15TE , IRF1407 , SSM3K03FE , SSM3K03FV , SSM3K03TE , SSM3K04FE , SSM3K04FS , SSM3K04FU , SSM3K04FV , SSM3K15TE .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - SSM3J16TE MOSFET datasheet

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