2SK1762 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1762
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 250
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 12
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65
nS
Cossⓘ - Capacitancia
de salida: 440
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35
Ohm
Paquete / Cubierta:
TO220FM
Búsqueda de reemplazo de 2SK1762 MOSFET
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2SK1762 datasheet
..1. Size:79K renesas
2sk1762.pdf 
2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D ... See More ⇒
0.1. Size:92K renesas
rej03g0969 2sk1762ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.2. Size:217K toshiba
2sk1768.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.3. Size:268K toshiba
2sk1767.pdf 
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ... See More ⇒
8.5. Size:75K renesas
2sk1764.pdf 
2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PLZZ0004C... See More ⇒
8.6. Size:92K renesas
rej03g0968 2sk1761ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.7. Size:89K renesas
rej03g0970 2sk1764ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.8. Size:45K hitachi
2sk1761.pdf 
2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drai... See More ⇒
8.9. Size:213K inchange semiconductor
2sk1767.pdf 
isc N-Channel MOSFET Transistor 2SK1767 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-... See More ⇒
8.10. Size:39K inchange semiconductor
2sk1766.pdf 
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS... See More ⇒
Otros transistores... 2SK1623L
, 2SK1623S
, 2SK1629
, 2SK1647L
, 2SK1647S
, 2SK1671
, 2SK1697
, 2SK1761
, IRFP260N
, 2SK1764
, 2SK1775
, 2SK1807
, 2SK1808
, 2SK1832
, 2SK1835
, 2SK1838L
, 2SK1838S
.