2SK1762 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1762
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 35 W
Предельно допустимое напряжение сток-исток (Uds): 250 V
Максимально допустимый постоянный ток стока (Id): 12 A
Сопротивление сток-исток открытого транзистора (Rds): 0.23 Ohm
Тип корпуса: TO220FM
2SK1762 Datasheet (PDF)
1.1. 2sk1762.pdf 
Size:79K _renesas
2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous: ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate
1.2. rej03g0969 2sk1762ds.pdf Size:92K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.1. 2sk1767.pdf Size:268K _update
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4.2. 2sk1769.pdf Size:110K _update
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4.3. 2sk1766.pdf Size:39K _update
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Fast Switching Speed APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS
4.4. 2sk1768.pdf Size:217K _update
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
4.5. rej03g0968 2sk1761ds.pdf Size:92K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.6. rej03g0970 2sk1764ds.pdf Size:89K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re
4.7. 2sk1764.pdf Size:75K _renesas
2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous: ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A (Package n
4.8. 2sk1761.pdf Size:45K _hitachi
2SK1761 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB 1 D 2 3 1. Gate G 2. Drain (Flange) 3. Source S 2SK1761 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source vo
Другие MOSFET... 2SK1623L , 2SK1623S , 2SK1629 , 2SK1647L , 2SK1647S , 2SK1671 , 2SK1697 , 2SK1761 , IRF3710 , 2SK1764 , 2SK1775 , 2SK1807 , 2SK1808 , 2SK1832 , 2SK1835 , 2SK1838L , 2SK1838S .
