All MOSFET. 2SK1762 Datasheet

 

2SK1762 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1762
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: TO220FM

 2SK1762 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1762 Datasheet (PDF)

 ..1. Size:79K  renesas
2sk1762.pdf

2SK1762 2SK1762

2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous: ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D

 0.1. Size:92K  renesas
rej03g0969 2sk1762ds.pdf

2SK1762 2SK1762

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:373K  1
2sk1760.pdf

2SK1762 2SK1762

 8.2. Size:217K  toshiba
2sk1768.pdf

2SK1762 2SK1762

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.3. Size:268K  toshiba
2sk1767.pdf

2SK1762 2SK1762

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 8.4. Size:110K  toshiba
2sk1769.pdf

2SK1762 2SK1762

www.DataSheet4U.comwww.DataSheet4U.com

 8.5. Size:75K  renesas
2sk1764.pdf

2SK1762 2SK1762

2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous: ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004C

 8.6. Size:92K  renesas
rej03g0968 2sk1761ds.pdf

2SK1762 2SK1762

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:89K  renesas
rej03g0970 2sk1764ds.pdf

2SK1762 2SK1762

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:45K  hitachi
2sk1761.pdf

2SK1762 2SK1762

2SK1761Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converterOutlineTO-220AB1D231. GateG2. Drain(Flange)3. SourceS2SK1761Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrai

 8.9. Size:213K  inchange semiconductor
2sk1767.pdf

2SK1762 2SK1762

isc N-Channel MOSFET Transistor 2SK1767DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

 8.10. Size:39K  inchange semiconductor
2sk1766.pdf

2SK1762 2SK1762

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage : VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PK510BA | SDF230JAA | SSH9N80A | 80N06-251

 

 
Back to Top