2SK1762 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1762
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO220FM
2SK1762 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1762 Datasheet (PDF)
2sk1762.pdf
2SK1762 Silicon N Channel MOS FET REJ03G0969-0200 (Previous: ADE-208-1316) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)D
rej03g0969 2sk1762ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1768.pdf
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2sk1767.pdf
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2sk1764.pdf
2SK1764 Silicon N Channel MOS FET REJ03G0970-0200 (Previous: ADE-208-1317) Rev.2.00 Sep 07, 2005 Application Low frequency amplifier High speed switching Features Low on-resistance High speed switching 4 V Gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004C
rej03g0968 2sk1761ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0970 2sk1764ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1761.pdf
2SK1761Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converterOutlineTO-220AB1D231. GateG2. Drain(Flange)3. SourceS2SK1761Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrai
2sk1767.pdf
isc N-Channel MOSFET Transistor 2SK1767DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
2sk1766.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1766 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage : VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 250 V VGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PK510BA | SDF230JAA | SSH9N80A | 80N06-251
History: PK510BA | SDF230JAA | SSH9N80A | 80N06-251
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