H5N2301PF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N2301PF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 230 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO3PFM

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H5N2301PF datasheet

 8.1. Size:104K  renesas
 rej03g0026 h5n2305pf.pdf pdf_icon

H5N2301PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:108K  renesas
 rej03g0031 h5n2306pf.pdf pdf_icon

H5N2301PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... H5N1503P, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS, H5N2005DL, H5N2005DS, H5N2008P, AOD4184A, H5N2305P, H5N2305PF, H5N2306PF, H5N2504DL, H5N2504DS, H5N2505DL, H5N2505DS, H5N2507P