Справочник MOSFET. H5N2301PF

 

H5N2301PF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: H5N2301PF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 230 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: TO3PFM
 

 Аналог (замена) для H5N2301PF

   - подбор ⓘ MOSFET транзистора по параметрам

 

H5N2301PF Datasheet (PDF)

 8.1. Size:104K  renesas
 rej03g0026 h5n2305pf.pdf pdf_icon

H5N2301PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:108K  renesas
 rej03g0031 h5n2306pf.pdf pdf_icon

H5N2301PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... H5N1503P , H5N1506P , H5N2003P , H5N2004DL , H5N2004DS , H5N2005DL , H5N2005DS , H5N2008P , HY1906P , H5N2305P , H5N2305PF , H5N2306PF , H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , H5N2507P .

History: STF13N60M2 | SIHFD014 | SP8M70 | PSMN5R6-100PS | 2SK1074 | SI7491DP

 

 
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