H5N2301PF Specs and Replacement

Type Designator: H5N2301PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 230 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO3PFM

H5N2301PF substitution

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H5N2301PF datasheet

 8.1. Size:104K  renesas
 rej03g0026 h5n2305pf.pdf pdf_icon

H5N2301PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 8.2. Size:108K  renesas
 rej03g0031 h5n2306pf.pdf pdf_icon

H5N2301PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: H5N1503P, H5N1506P, H5N2003P, H5N2004DL, H5N2004DS, H5N2005DL, H5N2005DS, H5N2008P, AOD4184A, H5N2305P, H5N2305PF, H5N2306PF, H5N2504DL, H5N2504DS, H5N2505DL, H5N2505DS, H5N2507P

Keywords - H5N2301PF MOSFET specs

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