H5N2509PF Todos los transistores

 

H5N2509PF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: H5N2509PF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: TO3PFM
     - Selección de transistores por parámetros

 

H5N2509PF Datasheet (PDF)

 6.1. Size:100K  renesas
rej03g1109 h5n2509pds.pdf pdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:132K  renesas
rej03g1107 h5n2505dldsds.pdf pdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:104K  renesas
rej03g1108 h5n2508dldsds.pdf pdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:108K  renesas
r07ds0399ej h5n2504dl.pdf pdf_icon

H5N2509PF

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300(Previous: REJ03G1106-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 16, 2011Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMP1096UCB4 | SMOS44N80 | AM2336N-T1 | AUIRF7734M2 | G11 | CEF05N6

 

 
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