All MOSFET. H5N2509PF Datasheet

 

H5N2509PF Datasheet and Replacement


   Type Designator: H5N2509PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO3PFM
 

 H5N2509PF substitution

   - MOSFET ⓘ Cross-Reference Search

 

H5N2509PF Datasheet (PDF)

 6.1. Size:100K  renesas
rej03g1109 h5n2509pds.pdf pdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:132K  renesas
rej03g1107 h5n2505dldsds.pdf pdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:104K  renesas
rej03g1108 h5n2508dldsds.pdf pdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:108K  renesas
r07ds0399ej h5n2504dl.pdf pdf_icon

H5N2509PF

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300(Previous: REJ03G1106-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 16, 2011Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package

Datasheet: H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , H5N2507P , H5N2508DL , H5N2508DS , H5N2509P , IRF540N , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P , H5N2519P , H5N2522LS , H5N2801P , H5N2802PF .

History: PE532DY | OSG60R1K8PF

Keywords - H5N2509PF MOSFET datasheet

 H5N2509PF cross reference
 H5N2509PF equivalent finder
 H5N2509PF lookup
 H5N2509PF substitution
 H5N2509PF replacement

 

 
Back to Top

 


 
.