Справочник MOSFET. H5N2509PF

 

H5N2509PF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: H5N2509PF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 60 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.053 Ohm
   Тип корпуса: TO3PFM
 

 Аналог (замена) для H5N2509PF

   - подбор ⓘ MOSFET транзистора по параметрам

 

H5N2509PF Datasheet (PDF)

 6.1. Size:100K  renesas
rej03g1109 h5n2509pds.pdfpdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:132K  renesas
rej03g1107 h5n2505dldsds.pdfpdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:104K  renesas
rej03g1108 h5n2508dldsds.pdfpdf_icon

H5N2509PF

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:108K  renesas
r07ds0399ej h5n2504dl.pdfpdf_icon

H5N2509PF

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300(Previous: REJ03G1106-0200)Silicon N Channel MOS FET Rev.3.00High Speed Power Switching May 16, 2011Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package

Другие MOSFET... H5N2504DL , H5N2504DS , H5N2505DL , H5N2505DS , H5N2507P , H5N2508DL , H5N2508DS , H5N2509P , IRF540N , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P , H5N2519P , H5N2522LS , H5N2801P , H5N2802PF .

History: DH300P06F | OSG60R180FT3F | NCE65T180T | 2SK4059TK | IRF3709Z | NCEAP4040Q | YJQ40G10A

 

 
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