H5N2519P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N2519P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 310 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO3P

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H5N2519P datasheet

 ..1. Size:114K  renesas
rej03g0478 h5n2519p.pdf pdf_icon

H5N2519P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:93K  renesas
rej03g0413 h5n2515p.pdf pdf_icon

H5N2519P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:65K  renesas
rej03g1203 h5n2514p.pdf pdf_icon

H5N2519P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:92K  renesas
h5n2512fl-m0.pdf pdf_icon

H5N2519P

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D

Otros transistores... H5N2508DL, H5N2508DS, H5N2509P, H5N2509PF, H5N2510DL, H5N2510DS, H5N2514P, H5N2515P, IRF1404, H5N2522LS, H5N2801P, H5N2802PF, H5N2803PF, H5N3003P, H5N3004P, H5N3005LD, H5N3005LS