All MOSFET. H5N2519P Datasheet

 

H5N2519P Datasheet and Replacement


   Type Designator: H5N2519P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 310 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO3P
 

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H5N2519P Datasheet (PDF)

 ..1. Size:114K  renesas
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H5N2519P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:93K  renesas
rej03g0413 h5n2515p.pdf pdf_icon

H5N2519P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:65K  renesas
rej03g1203 h5n2514p.pdf pdf_icon

H5N2519P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:92K  renesas
h5n2512fl-m0.pdf pdf_icon

H5N2519P

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100250V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D

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Keywords - H5N2519P MOSFET datasheet

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