H5N2519P Datasheet and Replacement
Type Designator: H5N2519P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 120 nC
tr ⓘ - Rise Time: 310 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO3P
H5N2519P substitution
H5N2519P Datasheet (PDF)
rej03g0478 h5n2519p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0413 h5n2515p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1203 h5n2514p.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
h5n2512fl-m0.pdf

Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100250V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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