H5N2519P
MOSFET. Datasheet pdf. Equivalent
Type Designator: H5N2519P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 65
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 120
nC
trⓘ - Rise Time: 310
nS
Cossⓘ -
Output Capacitance: 700
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
TO3P
H5N2519P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H5N2519P
Datasheet (PDF)
..1. Size:114K renesas
rej03g0478 h5n2519p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:93K renesas
rej03g0413 h5n2515p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:65K renesas
rej03g1203 h5n2514p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:92K renesas
h5n2512fl-m0.pdf
Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100250V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D
8.4. Size:73K renesas
rej03g1110 h5n2510dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: FQT7N10L
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, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
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, FDP085N10A
, FQU20N06L
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, FDMC8030
.