Аналоги H5N2519P. Основные параметры
Наименование производителя: H5N2519P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 310 ns
Cossⓘ - Выходная емкость: 700 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TO3P
Аналог (замена) для H5N2519P
H5N2519P даташит
rej03g0478 h5n2519p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g0413 h5n2515p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1203 h5n2514p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
h5n2512fl-m0.pdf
Preliminary Datasheet H5N2512FL-M0 R07DS0997EJ0100 250V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.082 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D
Другие MOSFET... H5N2508DL , H5N2508DS , H5N2509P , H5N2509PF , H5N2510DL , H5N2510DS , H5N2514P , H5N2515P , IRF1404 , H5N2522LS , H5N2801P , H5N2802PF , H5N2803PF , H5N3003P , H5N3004P , H5N3005LD , H5N3005LS .
History: FDD6776A | FDC655AN
Список транзисторов
Обновления
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