H5N3011P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H5N3011P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 88 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 370 nS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: TO3P

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H5N3011P datasheet

 ..1. Size:128K  renesas
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H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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H5N3011P

INCHANGE Semiconductor isc N-Channel MOSFET Transistor H5N3011P FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.1. Size:92K  renesas
h5n3007fl-m0.pdf pdf_icon

H5N3011P

Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100 300V - 15A - MOS FET Rev.1.00 High Speed Power Switching Jan 09, 2013 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D

 9.2. Size:137K  renesas
rej03g0007 h5n3003p.pdf pdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... H5N2801P, H5N2802PF, H5N2803PF, H5N3003P, H5N3004P, H5N3005LD, H5N3005LS, H5N3008P, IRFB4115, H5N5001FM, H5N5006DL, H5N5006DS, H5N5006FM, H5N5006LS, H5N5007P, H5N5012P, H5N5015P