H5N3011P
MOSFET. Datasheet pdf. Equivalent
Type Designator: H5N3011P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 88
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 95
nC
trⓘ - Rise Time: 370
nS
Cossⓘ -
Output Capacitance: 640
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
TO3P
H5N3011P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H5N3011P
Datasheet (PDF)
..1. Size:128K renesas
rej03g0385 h5n3011p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
..2. Size:257K inchange semiconductor
h5n3011p.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor H5N3011PFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
9.1. Size:92K renesas
h5n3007fl-m0.pdf
Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100300V - 15A - MOS FET Rev.1.00High Speed Power Switching Jan 09, 2013Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D
9.2. Size:137K renesas
rej03g0007 h5n3003p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:76K renesas
h5n3005lm.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.4. Size:125K renesas
rej03g0539 h5n3008p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.5. Size:79K renesas
rej03g1315 h5n3005ldlslmds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.6. Size:133K renesas
rej03g1111 h5n3004pds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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