All MOSFET. H5N3011P Datasheet

 

H5N3011P Datasheet and Replacement


   Type Designator: H5N3011P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 88 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 95 nC
   tr ⓘ - Rise Time: 370 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: TO3P
 

 H5N3011P substitution

   - MOSFET ⓘ Cross-Reference Search

 

H5N3011P Datasheet (PDF)

 ..1. Size:128K  renesas
rej03g0385 h5n3011p.pdf pdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:257K  inchange semiconductor
h5n3011p.pdf pdf_icon

H5N3011P

INCHANGE Semiconductorisc N-Channel MOSFET Transistor H5N3011PFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.1. Size:92K  renesas
h5n3007fl-m0.pdf pdf_icon

H5N3011P

Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100300V - 15A - MOS FET Rev.1.00High Speed Power Switching Jan 09, 2013Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D

 9.2. Size:137K  renesas
rej03g0007 h5n3003p.pdf pdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - H5N3011P MOSFET datasheet

 H5N3011P cross reference
 H5N3011P equivalent finder
 H5N3011P lookup
 H5N3011P substitution
 H5N3011P replacement

 

 
Back to Top

 


 
.