H5N3011P PDF and Equivalents Search

 

H5N3011P Specs and Replacement

Type Designator: H5N3011P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 370 nS

Cossⓘ - Output Capacitance: 640 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm

Package: TO3P

H5N3011P substitution

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H5N3011P datasheet

 ..1. Size:128K  renesas
rej03g0385 h5n3011p.pdf pdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 ..2. Size:257K  inchange semiconductor
h5n3011p.pdf pdf_icon

H5N3011P

INCHANGE Semiconductor isc N-Channel MOSFET Transistor H5N3011P FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

 9.1. Size:92K  renesas
h5n3007fl-m0.pdf pdf_icon

H5N3011P

Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100 300V - 15A - MOS FET Rev.1.00 High Speed Power Switching Jan 09, 2013 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D ... See More ⇒

 9.2. Size:137K  renesas
rej03g0007 h5n3003p.pdf pdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: H5N2801P , H5N2802PF , H5N2803PF , H5N3003P , H5N3004P , H5N3005LD , H5N3005LS , H5N3008P , IRFB4115 , H5N5001FM , H5N5006DL , H5N5006DS , H5N5006FM , H5N5006LS , H5N5007P , H5N5012P , H5N5015P .

Keywords - H5N3011P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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