H5N3011P - описание и поиск аналогов

 

Аналоги H5N3011P. Основные параметры


   Наименование производителя: H5N3011P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 370 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
   Тип корпуса: TO3P
 

 Аналог (замена) для H5N3011P

   - подбор ⓘ MOSFET транзистора по параметрам

 

H5N3011P даташит

 ..1. Size:128K  renesas
rej03g0385 h5n3011p.pdfpdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:257K  inchange semiconductor
h5n3011p.pdfpdf_icon

H5N3011P

INCHANGE Semiconductor isc N-Channel MOSFET Transistor H5N3011P FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 9.1. Size:92K  renesas
h5n3007fl-m0.pdfpdf_icon

H5N3011P

Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100 300V - 15A - MOS FET Rev.1.00 High Speed Power Switching Jan 09, 2013 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D

 9.2. Size:137K  renesas
rej03g0007 h5n3003p.pdfpdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Другие MOSFET... H5N2801P , H5N2802PF , H5N2803PF , H5N3003P , H5N3004P , H5N3005LD , H5N3005LS , H5N3008P , IRFB4115 , H5N5001FM , H5N5006DL , H5N5006DS , H5N5006FM , H5N5006LS , H5N5007P , H5N5012P , H5N5015P .

 

 

 


 
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