Аналоги H5N3011P. Основные параметры
Наименование производителя: H5N3011P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 88 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 370 ns
Cossⓘ - Выходная емкость: 640 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
Тип корпуса: TO3P
Аналог (замена) для H5N3011P
H5N3011P даташит
rej03g0385 h5n3011p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
h5n3011p.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor H5N3011P FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE
h5n3007fl-m0.pdf
Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100 300V - 15A - MOS FET Rev.1.00 High Speed Power Switching Jan 09, 2013 Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D
rej03g0007 h5n3003p.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие MOSFET... H5N2801P , H5N2802PF , H5N2803PF , H5N3003P , H5N3004P , H5N3005LD , H5N3005LS , H5N3008P , IRFB4115 , H5N5001FM , H5N5006DL , H5N5006DS , H5N5006FM , H5N5006LS , H5N5007P , H5N5012P , H5N5015P .
Список транзисторов
Обновления
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