Справочник MOSFET. H5N3011P

 

H5N3011P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: H5N3011P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 88 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 370 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
   Тип корпуса: TO3P
     - подбор MOSFET транзистора по параметрам

 

H5N3011P Datasheet (PDF)

 ..1. Size:128K  renesas
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H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 ..2. Size:257K  inchange semiconductor
h5n3011p.pdfpdf_icon

H5N3011P

INCHANGE Semiconductorisc N-Channel MOSFET Transistor H5N3011PFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 9.1. Size:92K  renesas
h5n3007fl-m0.pdfpdf_icon

H5N3011P

Preliminary Datasheet H5N3007FL-M0 R07DS0995EJ0100300V - 15A - MOS FET Rev.1.00High Speed Power Switching Jan 09, 2013Features Low on-resistance RDS(on) = 0.12 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D

 9.2. Size:137K  renesas
rej03g0007 h5n3003p.pdfpdf_icon

H5N3011P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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History: SM7508NSF | IPB90R340C3 | HGD110N08AL | SI1402DH | 2N4338 | AP9563GJ | DMP210DUFB4

 

 
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